| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus, with which an amount of metallic contamination in etching processing on a workpiece is reduced.SOLUTION: In a plasma processing apparatus, a material forming a surface of a stage electrode, on which workpieces are placed, is a material whose main component is AlO. In predetermined plasma processing on the workpieces by etching processing means, BClis used as an etching processing gas. In cleaning discharge performed by cleaning discharge means between the predetermined plasma processing on an Nth workpiece and predetermined processing on an N+1th workpiece, at least two kinds of cleaning discharge are performed which include first cleaning discharge and second cleaning discharge. In the first cleaning discharge, discharge is performed using Oas a cleaning gas to thereby selectively remove Cl from a volatile reaction product, which is a B-Cl deposition, through reaction with B that is a metallic element contained in the etching processing gas. In the second cleaning discharge, discharge is performed using SFor CxFy gas as a cleaning gas, thereby removing the reducing element B.</p> |
