| 摘要 |
本发明提供一种用来管理一记忆装置之方法以及其相关之记忆装置与控制器，该方法包含有下列步骤：将接收自一主装置之资料暂时地储存于该控制器中之一挥发性记忆体作为接收资料，并动态地监控该接收资料的资料量以决定是否立即将该接收资料写入至少一非挥发性记忆体元件；以及当决定立即将该接收资料写入该至少一非挥发性记忆体元件时，将该接收资料直接写入一特定非挥发性记忆体元件当中被组态成多阶细胞记忆区块之一特定区块，而非藉由先将该接收资料暂时地写入被组态成单阶细胞记忆区块之任何其它区块来间接地写入该特定区块。; and when determining to immediately write the received data into the at least one NV memory element, directly writing the received data into a specific block configured to be a Multiple Level Cell (MLC) memory block within a specific NV memory element, rather than indirectly writing the received data into the specific block by first temporarily writing the received data into any other block configured to be Single Level Cell (SLC) memory block. |
