| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface emitting semiconductor laser capable of high speed modulation.SOLUTION: A surface emitting semiconductor laser is constituted to include a driving mesa 20 formed monolithically on a substrate 100, a coupling part 30 and a control mesa 40. An n-type lower DBR 102, an active region 104, and a p-type upper DBR 108 are formed on a substrate 100. A current constriction layer 106 including an oxidation region 106A and a non-oxidation region 106B is formed in an upper DBR 108. The coupling part 30 couples the driving mesa 20 and control mesa 40 optically, makes a part of the light generated in the driving mesa 20 propagate to the control mesa 40, and returns the light reflected on the control mesa 40 back to the driving mesa 20. |
