| 摘要 |
一实施例包含振荡器，该振荡器包括放大器，被形成在基板上；多数闸极共振通道阵列，被形成在该基板上，包含：(a)电晶体，其包含鳍片，该等鳍片的每一者具有一于源极与汲极节点间之通道，并耦接至共用的源极与汲极接点；及(b)共用的第一与第二三闸极，其耦接至该等鳍片之每一者，且位于该源极与汲极接点之间；其中当该第一与第二三闸极的其中一者被周期地启动至在该等鳍片上产生周期性向下力时，该等鳍片在第一频率机械地共振。其他实施例包含非平面电晶体，具有于该源极与汲极节点间之通道，及一在该鳍片上之三闸极；其中当该第一三闸极被周期地启动以在该鳍片上产生周期性向下力时，该鳍片机械地共振。其他实施例在此中被叙述。; a multiple gate resonant channel array, formed on the substrate, including: (a) transistors including fins, each of the fins having a channel between source and drain nodes, coupled to common source and drain contacts; and (b) common first and second tri-gates coupled to each of the fins and located between the source and drain contacts; wherein the fins mechanically resonate at a first frequency when one of the first and second tri-gates is periodically activated to produce periodic downward forces on the fins. Other embodiments include a non planar transistor with a channel between the source and drain nodes and a tri-gate on the fin; wherein the fin mechanically resonates when the first tri-gate is periodically activated to produce periodic downward forces on the fin. Other embodiments are described herein. |
