| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor device and a manufacturing method of the same, which inhibits deterioration of characteristics caused by heat generation and which achieves, in transferring of a nitride semiconductor layer or a nitride semiconductor element to a substrate, adhesion to a transfer substrate having high adhesion, high heat conductivity and high heat resistance.SOLUTION: A nitride semiconductor hetero structure field effect transistor (HFET) comprises on a transfer substrate 101: an AlGaInN/GaN hetero structure which has an In layer 102 and a BN layer 103 on the transfer substrate 101, and a GaN layer 104 and an AlGaInN layer 105 which are sequentially laminated on the BN layer 103; and a source electrode S, a gate electrode G and a drain electrode D which are formed on the AlGaInN layer 105. In order to bond the transfer substrate 101 and the nitride semiconductor HFET, the In layer 102 is utilized, but Au, Ag and the like can be used, for example, instead of In. |
