BIPOLAR TRANSISTOR AND SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING BIPOLAR TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To suppress disconnection of base wiring even in a case where a transverse direction of a collector layer is along a crystal orientation [011].SOLUTION: A bipolar transistor (10) comprises: a collector layer (16) having a longitudinal direction and a transverse direction in a plan view, the transverse direction being along a crystal orientation [011], a shape of a cross section orthogonal to the transverse direction being an inverted mesa type, a shape of a cross section orthogonal to the longitudinal direction being a forward mesa type; a base layer (20) formed on the collector layer (16); a base electrode (22) formed on the base layer (20); and base wiring (22B) connected with the base electrode (22), and led from an end part in the transverse direction of the collector layer (16) in a plan view to the external of the collector layer (16).