| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device using a group-III nitride semiconductor capable of attaining both high withstand voltage and low on-resistance.SOLUTION: A first layer 30 is provided above a first surface of a substrate 10 and is made from a first-conductivity-type group-III nitride semiconductor. A second layer 40 is provided on the first layer 30 and is made from a second-conductivity-type group-III nitride semiconductor. A third layer 50 is partially provided on a first region of a surface of the second layer 40 and is made from AlGaN. A gate electrode 70 has one end located above a surface of the third layer 50 and the other end located in the first layer 30 via the second layer 40, and is insulated from the first layer 30, the second layer 40, and the third layer 50. A first electrode 90 is connected to the third layer 50. A second electrode 95 is connected to a second region other than the first region of the surface of the second layer 40. A third electrode 99 is provided on a second surface of the substrate 10 on the opposite side of the first surface. |
