| 摘要 |
PROBLEM TO BE SOLVED: To provide a wide bandgap semiconductor device capable of achieving a high voltage resistance without increasing size.SOLUTION: A wide bandgap semiconductor device has a semiconductor substrate (an epitaxial substrate 20) having a main surface (an upper surface P2) and consisting of a wide bandgap semiconductor. The semiconductor substrate 20 contains a device region 20E formed on the semiconductor substrate 20; and a peripheral region 20T formed to surround the device region 20E. On the peripheral region 20T, the semiconductor substrate 20 contains a first semiconductor region (a drift layer 21) having the first conductivity type; and a second semiconductor region (a field relaxation region 25) formed on the first semiconductor region (the drift layer 21) and having a main surface P2 and the second conductivity type being different from the first conductivity type. A plurality of trenches 70 circularly surrounding the device region 20E, is formed on the main surface P2 of the second semiconductor region (the field relaxation region 25). |
