| 摘要 |
<p>A light emitting device according to an embodiment of the present invention includes a light emitting structure which includes a substrate, a first semiconductor layer which is arranged on the substrate and includes a leakage current blocking layer, an active layer which is arranged on the first semiconductor layer, and a second semiconductor layer which is arranged on the active layer. The leakage current blocking layer is arranged near the active layer. A plurality of first layers with compressive stress by including AlGaN and a plurality of second layers with tensile stress by including GaN are alternatively and repetitively stacked on the leakage current blocking layer. The substrate includes Si.</p> |
