| 摘要 |
本发明提供一种高速光侦测器，其包括：一第一层，其包括具有一第一带隙能量(其经调适以吸收一所欲范围内之波长之光)及一第一掺杂浓度之一第一半导体材料；及一第二层，其与该第一层之一相邻侧介接，该第二层包括具有高于该第一带隙能量之一第二带隙能量及一第二掺杂浓度；其中该第一层、该第二层及该第一层与该第二层之间的一区域之至少一者中的一掺杂浓度之一分布使得建立于该第二层内之一非零电场小于在一相同反向偏压条件下建立于该第一层内之一电场。; and a second layer interfaced with an adjacent side of the first layer, the second layer comprising a second semiconductor material having a second band gap energy higher than the first band gap energy and a second doping concentration; wherein a distribution of a doping concentration in at least one of the first layer, the second layer and a region between the first and second layers is such that a non-zero electric field established within the second layer is smaller than an electric field established within the first layer under a same reverse bias condition. |
