| 摘要 |
PROBLEM TO BE SOLVED: To provide a novel pattern forming method that is completely different from a conventional double-patterning method, by which a pattern having a finer pitch is formed by single exposure and single development, to provide an actinic ray-sensitive or radiation-sensitive resin composition and a resist film used for the pattern forming method, a method for manufacturing an electronic device, and an electronic device, more particularly, to provide a pattern forming method by which a pattern having a pitch half or less than half a pitch of a mask can be formed, and to provide an actinic ray-sensitive or radiation-sensitive resin composition and a resist film used for the pattern forming method, and a method for manufacturing an electronic device, and an electronic device.SOLUTION: The pattern forming method includes the following steps (1) to (3): (1) forming a film by using an actinic ray-sensitive or radiation-sensitive resin composition, the film having such characteristics that the solubility in a developer increases with increase in the exposure dose from an unexposed state, but the solubility decreases once the exposure dose reaches a given level or higher; (2) exposing the film; and (3) developing the exposed film by using a developer containing an organic solvent by 80 mass% or more with respect to the whole amount of the developer. |
