| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a wafer, capable of suppressing removal amount when cutting out the wafer from an ingot.SOLUTION: This method of manufacturing the wafer by separating the ingot includes a crystal axis detecting step for setting a separation surface direction inclined at a prescribed angle with respect to a crystal axis by detecting the crystal axis of the ingot, a flattening step for flattening the top face of the ingot parallel to the separation surface direction after implementing the crystal axis detecting step, a modified surface forming step for forming a modified surface along the separation surface direction in the inside of the ingot by positioning the condensed point of a laser beam at the inside of the ingot and irradiating the lase beam fron the top face of the flattened ingot after implementing the flattening step, and a peeling step for manufacturing the wafer by separating the top face side of the ingot with the modified surface used as a boundary after implementing the modified surface forming step. |
