SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device and a manufacturing method of the same, which can improve threshold voltage while inhibiting increase in specific on-resistance.SOLUTION: A silicon carbide semiconductor device comprises a silicon carbide layer 10 and a gate insulation layer 15. The silicon carbide layer 10 has a principal surface 10a. The gate insulation layer 15 is arranged in contact with the principal surface 10a of the silicon carbide layer 10. The silicon carbide layer 10 includes: a drift region 17 which has a first conductivity type; a body region 13 which has a second conductivity type and contacts the drift region 17; a source region 14 which has the first conductivity type and is arranged to be separated from the drift region 17 by the body region 13; and a projection region 2 which is arranged to project from at least one of the source region 14 and the drift region 17 to the body region 13 and contacts the gate insulation layer 15 and has the first conductivity type.