发明名称 GATE CONTROL CIRCUIT OF SEMICONDUCTOR ELEMENT FOR POWER
摘要 PROBLEM TO BE SOLVED: To provide a gate control circuit of a semiconductor element for power, which can restrictively limit active clamp operation.SOLUTION: The gate control circuit of the semiconductor element for power is comprised of: gate signal generation means 1 for generating a gate reference signal; gate driving means 2 including an active clamp circuit which amplifies the gate reference signal, supplies a gate signal to the semiconductor element for power, and when collector voltage overshoots and exceeds a predetermined threshold when turning off the semiconductor element for power, applies ON voltage to a gate of the semiconductor element for power; gate feedback voltage detection means which detects the voltage of a gate as a feedback voltage, and when the feedback voltage value exceeds a predetermined value, determines the feedback voltage as an ON level; and OFF-time gate inconsistency detection means 5 which, when the feedback voltage is turned to the ON level when the gate reference signal is a turn-off command state, outputs an inconsistency signal. When the inconsistency signal is obtained, the gate signal generation means 1 performs gate block after lapse of predetermined time.
申请公布号 JP2015033198(A) 申请公布日期 2015.02.16
申请号 JP20130160557 申请日期 2013.08.01
申请人 TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEM CORP 发明人 MOSTAFA MAMUN;TAKAO KENJI
分类号 H02M1/08;H02M1/00;H03K17/16;H03K17/56 主分类号 H02M1/08
代理机构 代理人
主权项
地址