SILICON CARBIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device manufacturing method which can inhibit variation in channel length.SOLUTION: A silicon carbide semiconductor device manufacturing method comprises: a process of preparing a silicon carbide layer 10 having a principal surface 10a; a process of forming a first mask layer which lies on a first region (a part of a body region 13) which is to form a channel region CH and has first openings on regions opposite to each other across the first region; and a process of forming on regions exposed from the first openings, high-concentration impurity regions (n+ regions 2, 3) each having first conductivity type and an impurity concentration higher than an impurity concentration of the silicon carbide layer by performing ion implantation on the principal surface 10a through the first mask layer.