发明名称 |
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANAGING MANUFACTURING STEP OF SILICON CARBIDE SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon carbide semiconductor device capable of achieving stable quality and improved yield of the silicon carbide semiconductor device by highly accurately managing temperatures, and a method for managing a manufacturing step of the silicon carbide semiconductor device.SOLUTION: A method for manufacturing a silicon carbide semiconductor device comprises the steps of: (a) preparing a silicon carbide base; (b)forming a carbon protective film 20 on the base; (c) performing thermal treatment for the base and the carbon protective film; and (d) measuring a temperature on the base by analyzing the carbon protective film by Raman spectroscopy after the step (c). |
申请公布号 |
JP2015032678(A) |
申请公布日期 |
2015.02.16 |
申请号 |
JP20130160909 |
申请日期 |
2013.08.02 |
申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
OKABE HIROAKI;FURUHASHI AKIYUKI |
分类号 |
H01L21/265;H01L21/205;H01L21/336;H01L29/12;H01L29/78 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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