| 摘要 |
PROBLEM TO BE SOLVED: To enhance the ESD immunity of an electrostatic protective element.SOLUTION: The essence of the basic ideas is to configure so that not a thyristor or an npn bipolar transistor but a pnp bipolar transistor is included as an electrostatic protective element ESD, and connected in parallel with a diode. In other words, the essence of the basic ideas is to constitute the electrostatic protective element ESD of a diode provided with a pnp bipolar transistor parasitically. |
