| 摘要 |
In the present invention, provided is a transparent conductive film which is a stackable structure of a transparent substrate, a high refractive layer, a low refractive layer and a conductive layer wherein the low refractive layer has a silicon oxynitride (SiON) film. In the present invention, provided is a manufacturing method of the transparent conductive film comprising the steps of preparing transparent substrates; forming a high refractive layer manufactured by coating a compound formed by mixing ZrO_2, TiO_2 and Ta_2O_5 on the upper part of the transparent substrate; forming a low refractive layer manufactured by depositing the silicon oxynitride film on the upper part of the high refractive layer in a sputtering method; and forming a conductive layer manufactured by depositing indium tin oxide (ITO) or fluorine-doped tin oxide (FTO) on the upper part of the low refractive layer in a sputtering method. |
