| 摘要 |
<p>Provided are a thin film transistor device including a thin film transistor with a wide range of gate drive voltage, and an organic light emitting device. The thin film transistor is provided on a substrate and includes an active layer having a channel region with an effective channel width smaller than a critical dimension. The channel region includes a plurality of semiconductor material pieces electrically connected to each other, in which the semiconductor material pieces are not aligned with each other to limit the effective channel width.</p> |
