| 摘要 |
<p>The present invention relates to a solid-state imaging device capable of increasing the light receiving efficiency of a photoelectric conversion device, and a method for manufacturing the solid-state imaging device. According to an embodiment of the present invention, a solid-state imaging device is provided. The solid-state imaging device includes: a photoelectric conversion device, a first anti-reflection layer, a middle layer, and a second anti-reflection layer. The photoelectric conversion device is installed by corresponding to multiple color beams, respectively. The first anti-reflection layer is installed to the light receiving surface of the photoelectric conversion device. The middle layer is installed to the light receiving surface of the first anti-reflection layer. The second anti-reflection layer is installed to the light receiving surface of the middle layer. Also, the layer thickness of one among the first anti-reflection layer, the middle layer, and the second anti-reflection layer is different according to light beam received.</p> |
