| 摘要 |
A method for producing a light emitting diode device (21) includes the steps of preparing a base board (16); allowing a light semiconductor layer (3) where an electrode portion (4) is provided at one side in a thickness direction to be disposed in opposed relation to the base board (16), and the electrode portion (4) to be electrically connected to a terminal (15), so that the light semiconductor layer (3) is flip-chip mounted on the base board (16); forming an encapsulating resin layer (14) containing a light reflecting component at the other side of the base board (16) so as to cover the light semiconductor layer and (3) the electrode portion (4); removing the other side portion of the encapsulating resin layer (14) so as to expose the light semiconductor layer (3); and forming a phosphor layer (17) formed in a sheet state so as to be in contact with the other surface of the light semiconductor layer (3). |
