Method For Preparing Scandium-Doped Hafnium Oxide Film

摘要

A method for preparing scandium-doped hafnium oxide film includes preparing a hafnium target having scandium granules distributed on a peripheral surface thereof; and proceeding a sputtering process to form a scandium-doped hafnium oxide film on a substrate, wherein the scandium doping of the scandium-doped hafnium oxide film is in the range of 3-13%. Such scandium-doped hafnium oxide film is able to be used as an oxide layer in semiconductor element which effectively suppresses the current leakage and reduces the dimension of the semiconductor element.

主权项

1. A method for preparing scandium-doped hafnium oxide film, comprising:
preparing a hafnium target having scandium granules distributed on a peripheral surface thereof, wherein an area of the scandium granules to a peripheral surface of the hafnium target occupation ratio is 6.90-30.57%; and proceeding a sputtering process with the hafnium target to form a scandium-doped hafnium oxide film, wherein argon and oxygen are added with a flow rate of 1:1, and pressure in the sputtering process is selectively adjusted to 1×10−2 and 5×10−7 torr.