发明名称 半導体装置の製造方法
摘要 <p>Suppressed is damage of a semiconductor wafer due to charging of a cleaning liquid used in a single wafer type wafer cleaning step. A chemical solution discharged from a tip of a cleaning nozzle is brought into contact with protrusions of wafer chucks to thereby let static electricity of the chemical solution go to the wafer chucks, and subsequently, the cleaning nozzle is moved above the wafer to supply the chemical solution onto a top surface of the wafer, thereby suppressing abnormal discharge (damage) of the wafer due to charging of the chemical solution.</p>
申请公布号 JP5666183(B2) 申请公布日期 2015.02.12
申请号 JP20100162826 申请日期 2010.07.20
申请人 ルネサスエレクトロニクス株式会社 发明人
分类号 H01L21/304;H01L21/027 主分类号 H01L21/304
代理机构 代理人
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