发明名称 |
RESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR FABRICATING THE SAME |
摘要 |
A resistive random access memory and a method for fabricating the same are provided. The method includes forming a bottom electrode on a substrate; forming a metal oxide layer on the bottom electrode; forming an oxygen atom gettering layer on the metal oxide layer; forming a first top electrode sub-layer on the oxygen atom gettering layer; forming a second top electrode sub-layer on the first top electrode sub-layer, wherein the first top electrode sub-layer and the second top electrode sub-layer comprise a top electrode; and subjecting the metal oxide layer and the oxygen atom gettering layer to a thermal treatment, driving the oxygen atoms of the metal oxide layer to migrate into and react with the oxygen atom gettering layer, resulting in a plurality of oxygen vacancies within the metal oxide layer. |
申请公布号 |
US2015044851(A1) |
申请公布日期 |
2015.02.12 |
申请号 |
US201414521422 |
申请日期 |
2014.10.22 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
LEE HENG-YUAN;CHEN PANG-SHIU;WU TAI-YUAN;WANG CHING-CHIUN |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method for fabricating a resistive random access memory, comprising:
forming a bottom electrode on a substrate; forming a metal oxide layer on the bottom electrode; forming an oxygen atom gettering layer on the metal oxide layer to directly contact the metal oxide layer, wherein a material of the metal oxide layer is different from a material of the oxygen atom gettering layer; forming a top electrode on the oxygen atom gettering layer; and subjecting the metal oxide layer and the oxygen atom gettering layer to a thermal treatment, driving the oxygen atoms of the metal oxide layer to migrate into and react with the oxygen atom gettering layer, resulting in a plurality of oxygen vacancies within the metal oxide layer. |
地址 |
Hsinchu TW |