| 发明名称 |
METHOD FOR PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE |
| 摘要 |
In order to provide a method for producing a SiC-MOSFET capable of increasing Vth without deteriorating channel mobility, before forming a gate insulation film, (a) silicon carbide substrate is oxidized by a low temperature oxidation method represented by plasma oxidation to form a silicon oxide film. Next, (b) the silicon oxide film is removed. After repeating the processes (a) and (b) once or more, (c) the gate insulation film is formed. |
| 申请公布号 |
US2015044840(A1) |
申请公布日期 |
2015.02.12 |
| 申请号 |
US201214381597 |
申请日期 |
2012.03.30 |
| 申请人 |
Kobayashi Keisuke;Mine Toshiyuki;Hamamura Hirotaka |
发明人 |
Kobayashi Keisuke;Mine Toshiyuki;Hamamura Hirotaka |
| 分类号 |
H01L29/66;H01L21/02;H01L21/265;H01L29/16 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for producing a silicon carbide semiconductor device including a gate oxide film formed on a silicon carbide layer, comprising:
a process for carrying out annealing after forming a cap material on the silicon carbide layer; a process for forming a sacrificial oxidation film by an oxidation method at temperature lower than thermal oxidation temperature after removing the cap material; and a process for forming the gate oxide film after removing the sacrificial oxidation film. |
| 地址 |
Tokyo JP |
