发明名称 |
Packaging Methods and Structures for Semiconductor Devices |
摘要 |
Packaging methods and structures for semiconductor devices are disclosed. In one embodiment, a packaged semiconductor device includes a redistribution layer (RDL) having a first surface and a second surface opposite the first surface. At least one integrated circuit is coupled to the first surface of the RDL, and a plurality of metal bumps is coupled to the second surface of the RDL. A molding compound is disposed over the at least one integrated circuit and the first surface of the RDL. |
申请公布号 |
US2015044819(A1) |
申请公布日期 |
2015.02.12 |
申请号 |
US201414523248 |
申请日期 |
2014.10.24 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Lin Chih-Wei;Huang Kuei-Wei;Tsai Yu-Peng;Lin Chun-Cheng;Chen Meng-Tse;Yu Chen-Hua;Lii Mirng-Ji;Liu Chung-Shi;Jang Bor-Ping;Lin Hsiu-Jen;Lu Wen-Hsiung;Cheng Ming-Da;Lin Wei-Hung |
分类号 |
H01L25/065;H01L21/52;H01L21/56;H01L25/00;H01L23/00 |
主分类号 |
H01L25/065 |
代理机构 |
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代理人 |
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主权项 |
1. A method comprising:
forming a redistribution layer (RDL) comprising at least one inter-level dielectric (ILD) and at least one first metallization layer formed in the at least one ILD; coupling a first integrated circuit to a first surface of the RDL, the first integrated circuit in electrical contact with first traces of the at least one first metallization layer; forming a first molding compound over the first integrated circuit and the first surface of the RDL, a first surface of the first molding compound disposed above a top surface of the first integrated circuit; forming a second metallization layer having second traces on the first surface of the first molding compound, the second traces in electrical contact with the first traces; coupling a second integrated circuit to the second traces; and forming a second molding compound over the second integrated circuit and in direct contact with a portion of the first surface of the first molding compound. |
地址 |
Hsin-Chu TW |