发明名称 |
APPARATUS AND METHOD FOR FORMING CHALCOGENIDE SEMICONDUCTOR ABSORBER MATERIALS WITH SODIUM IMPURITIES |
摘要 |
A method and system for forming chalcogenide semiconductor absorber materials with sodium impurities is provided. The system includes a sodium vaporizer in which a solid sodium source material is vaporized. The sodium vapor is added to reactant gases and/or annealing gases and directed to a furnace that includes a substrate with a metal precursor material. The precursor material reacts with reactant gases such as S-containing gases and Se-containing gases according to various process sequences. In one embodiment, a selenization operation is followed by an annealing operation and a sulfurization operation and the sodium vapor is caused to react with the metal precursor during at least one of the annealing and the sulfurization steps to produce a chalcogenide semiconductor absorber material that includes sodium dopant impurities. |
申请公布号 |
US2015044814(A1) |
申请公布日期 |
2015.02.12 |
申请号 |
US201313962979 |
申请日期 |
2013.08.09 |
申请人 |
TSMC Solar Ltd. |
发明人 |
WU Chung-Hsien;YEN Wen-Tsai;WU Jyh-Lih |
分类号 |
H01L31/18;C23C16/448;H01L31/0392 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
1. A method for forming a chalcogenide semiconductor absorber material, said method comprising:
disposing a substrate with metallic precursors disposed thereon, in a furnace; vaporizing sodium to produce a sodium vapor; combining said sodium vapor with an inlet reaction gas stream to produce a gas mixture; delivering said gas mixture to said furnace; and causing said gas mixture to react with said metallic precursors in said furnace to form a chalcogenide semiconductor absorber material with sodium dopants therein. |
地址 |
Taichung City TW |