| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an improved electron beam-induced etching method.SOLUTION: An electron beam-induced etching method comprises: the step 202 of selecting a precursor gas; the step 204 of cooling a substrate to a temperature near the boiling point of a precursor molecule; and the step 206 of supplying, to a substrate surface, the selected precursor gas having a boiling point lower than the temperature of the substrate surface. The pressure inside a processing chamber is in a range of about 10-8 Torr which is used in an ultra-high vacuum system with a gas-introducing system to about 10 Torr used in an environmental control type scanning electron microscope system. The electron beam-induced etching method further comprises the step 208 of applying a beam, such as an electron beam, an ion beam, a cluster beam or a neutral beam to the substrate surface in a pattern in the presence of the precursor gas, whereby a reaction of the precursor gas is caused in the presence of the particle beam, and thus a material is removed from the substrate surface.</p> |
