| 摘要 |
<p>PROBLEM TO BE SOLVED: To increase the pressure detection sensitivity by reducing the size of a semiconductor pressure sensor.SOLUTION: A deep groove is formed in a thickness direction of a semiconductor substrate. When pressure is applied to a groove adjacent to the groove with part of the groove airtight, a barrier (corresponding to a diaphragm) between the grooves bends, causing the capacity of an airtight space or a groove part to change. By detecting the amount of the change, pressure can be detected. Deepening the groove causes the capacity to increase, thereby allowing a sensor having a smaller area to be created. Furthermore, thinning the barrier allows the amount of change in the barrier to increase, thereby improving the sensor sensitivity.</p> |
