| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To form a good-quality GaN-based semiconductor crystal layer by using a silicon substrate. <P>SOLUTION: A semiconductor substrate 100 includes a substrate 102 having a first area 104 and a second area 106 on a surface, and a first semiconductor formed over the first area. The surface of the substrate is composed of Si<SB>x</SB>Ge<SB>1-x</SB>(0≤x≤1) and the first area is surrounded by the second area. The first semiconductor is a group III-V compound semiconductor containing a nitrogen atom, is a single crystal, and provides lattice matching or pseudo-lattice matching with the Si<SB>x</SB>Ge<SB>1-x</SB>. The second area has a shape different from that of the first area. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
