发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS, AND PROGRAM |
摘要 |
A method of manufacturing a semiconductor device is provided, which enables the film quality to be improved when the film is formed on a substrate at a low temperature, thus forming fine patterns. The method of manufacturing a semiconductor device includes: forming the film on a substrate by alternately supplying at least a source gas and a reactive gas to the substrate while maintaining the substrate at a first temperature by heating; and modifying the film by supplying a modification gas excited by plasma to the substrate with the film formed thereon while naturally cooling the substrate with the film formed thereon to a second temperature without heating the substrate, the second temperature being lower than the first temperature. |
申请公布号 |
US2015044880(A1) |
申请公布日期 |
2015.02.12 |
申请号 |
US201314388160 |
申请日期 |
2013.03.25 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
Noda Takaaki;Hanashima Takeo |
分类号 |
H01L21/02;C23C16/46;C23C16/52;C23C16/50 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a semiconductor device comprising:
forming a film on a substrate by alternately supplying at least a source gas and a reactive gas to the substrate while maintaining the substrate at a first temperature by heating; and modifying the film by supplying a modification gas excited by plasma to the substrate with the film formed thereon while naturally cooling the substrate with the film formed thereon to a second temperature without heating the substrate, the second temperature being lower than the first temperature. |
地址 |
Tokyo JP |