发明名称 |
RESONANT TRANSDUCER, MANUFACTURING METHOD THEREFOR, AND MULTI-LAYER STRUCTURE FOR RESONANT TRANSDUCER |
摘要 |
A resonant transducer includes a silicon single crystal substrate, a silicon single crystal resonator disposed over the silicon single crystal substrate, a shell made of silicon, surrounding the resonator with a gap, and forming a chamber together with the silicon single crystal substrate, an exciting module configured to excite the resonator, a vibration detecting module configured to detect vibration of the resonator, a first layer disposed over the chamber, the first layer having a through-hole over the resonator, a second layer disposed over the first layer, the second layer covering a gap being positioned above the through-hole and being communicated with the through-hole, and a third layer covering the first layer and the second layer, and the third layer sealing the gap. |
申请公布号 |
US2015042208(A1) |
申请公布日期 |
2015.02.12 |
申请号 |
US201414446602 |
申请日期 |
2014.07.30 |
申请人 |
YOKOGAWA ELECTRIC CORPORATION |
发明人 |
YOSHIDA Takashi;MISHIMA Takeshi;IWAI Shigeto;YOSHIDA Yuusaku |
分类号 |
H01L41/083;H01L41/331 |
主分类号 |
H01L41/083 |
代理机构 |
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代理人 |
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主权项 |
1. A resonant transducer comprising:
a silicon single crystal substrate; a silicon single crystal resonator disposed over the silicon single crystal substrate; a shell made of silicon, surrounding the resonator with a gap, and forming a chamber together with the silicon single crystal substrate; an exciting module configured to excite the resonator; a vibration detecting module configured to detect vibration of the resonator; a first layer disposed over the chamber, the first layer having a through-hole over the resonator; a second layer disposed over the first layer, the second layer covering a gap being positioned above the through-hole and being communicated with the through-hole; and a third layer covering the first layer and the second layer, and the third layer sealing the gap. |
地址 |
Tokyo JP |