发明名称 RESONANT TRANSDUCER, MANUFACTURING METHOD THEREFOR, AND MULTI-LAYER STRUCTURE FOR RESONANT TRANSDUCER
摘要 A resonant transducer includes a silicon single crystal substrate, a silicon single crystal resonator disposed over the silicon single crystal substrate, a shell made of silicon, surrounding the resonator with a gap, and forming a chamber together with the silicon single crystal substrate, an exciting module configured to excite the resonator, a vibration detecting module configured to detect vibration of the resonator, a first layer disposed over the chamber, the first layer having a through-hole over the resonator, a second layer disposed over the first layer, the second layer covering a gap being positioned above the through-hole and being communicated with the through-hole, and a third layer covering the first layer and the second layer, and the third layer sealing the gap.
申请公布号 US2015042208(A1) 申请公布日期 2015.02.12
申请号 US201414446602 申请日期 2014.07.30
申请人 YOKOGAWA ELECTRIC CORPORATION 发明人 YOSHIDA Takashi;MISHIMA Takeshi;IWAI Shigeto;YOSHIDA Yuusaku
分类号 H01L41/083;H01L41/331 主分类号 H01L41/083
代理机构 代理人
主权项 1. A resonant transducer comprising: a silicon single crystal substrate; a silicon single crystal resonator disposed over the silicon single crystal substrate; a shell made of silicon, surrounding the resonator with a gap, and forming a chamber together with the silicon single crystal substrate; an exciting module configured to excite the resonator; a vibration detecting module configured to detect vibration of the resonator; a first layer disposed over the chamber, the first layer having a through-hole over the resonator; a second layer disposed over the first layer, the second layer covering a gap being positioned above the through-hole and being communicated with the through-hole; and a third layer covering the first layer and the second layer, and the third layer sealing the gap.
地址 Tokyo JP