| 发明名称 |
OPTOELECTRONIC DEVICE |
| 摘要 |
This invention generally relates to an optoelectronic device and a method of fabricating such a device, and more particularly to an optoelectronic device comprising an anode layer, a semiconductive layer provided over the anode layer, and a cathode layer provided over the semiconductive layer, the anode layer comprising a plurality of electrically conductive tracks connected together and spaced apart from one another with gaps therebetween, the device further comprising a first and one or more further hole injection layers provided between the anode layer and the semiconductive layer and extending across said gaps, wherein the first hole injection layer has a conductivity greater than the conductivity of the one or more further hole injection layers. |
| 申请公布号 |
US2015041787(A1) |
申请公布日期 |
2015.02.12 |
| 申请号 |
US201314385486 |
申请日期 |
2013.03.13 |
| 申请人 |
CAMBRIDGE DISPLAY TECHNOLOGY LIMITED |
发明人 |
Malik Surama;Carter Julian;Scullion Laurence;Baker Colin;Fleissner Arne;Burroughes Jeremy |
| 分类号 |
H01L51/50;H01L51/56;H01L51/00;H01L51/44;H01L51/52 |
主分类号 |
H01L51/50 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An optoelectronic device comprising an anode layer, a semiconductive layer provided over the anode layer, and a cathode layer provided over the semiconductive layer, the anode layer comprising a plurality of electrically conductive tracks connected together and spaced apart from one another with gaps therebetween, the device further comprising a first and one or more further hole injection layers provided between the anode layer and the semiconductive layer and extending across said gaps, wherein the first hole injection layer has a conductivity greater than the conductivity of the one or more further hole injection layers. |
| 地址 |
Cambridgeshire GB |
