Transistor Having Graphene Base

摘要

A transistor device having a graphene base for the transport of electrons into a collector is provided. The transistor consists of a heterostructure comprising an electron emitter, an electron collector, and a graphene material base layer consisting of one or more sheets of graphene situated between the emitter and the collector. The transistor also can further include an emitter transition layer at the emitter interface with the base and/or a collector transition layer at the base interface with the collector. The electrons injected into the graphene material base layer can be “hot electrons” having an energy E substantially greater than EF, the Fermi energy in the graphene material base layer or can be “non-hot electrons” having an energy E approximately equal to than EF. The electrons can have the properties of ballistic transit through the base layer.

主权项

1. A transistor device comprising:
a graphene material base layer comprising at least one sheet of graphene and further comprising at least one sheet of graphene optimized for formation of nucleation sites for atom attachment for epitaxial material growth; an emitter adjacent to a first side of the graphene material base layer and forming an emitter/base interface therewith; a collector adjacent to a second side of graphene material base layer opposite the first side and forming a collector/base interface therewith; and a plurality of electrodes, each of the plurality of electrodes being connected to and forming a separate electrical connection with one of the emitter, collector, and base; wherein the emitter has a conduction band minimum at a higher energy than a conduction band minimum of the graphene material base layer and is configured to inject electrons into the graphene material base layer having an energy E greater than a Fermi energy EF of the graphene material base layer to produce hot electrons in the graphene material base layer.