| 摘要 |
<p>In a strained SOI semiconductor layer, the stress relaxation which may typically occur during the patterning of trench isolation structures may be reduced by selecting an appropriate reduced target height of the active regions, thereby enabling the formation of transistor elements on the active region of reduced height, which may still include a significant amount of the initial strain component. The active regions of reduced height may be advantageously used for forming fully depleted field effect transistors.</p> |
