发明名称 INERTIAL AND PRESSURE SENSORS ON SINGLE CHIP
摘要 In one embodiment, the process flow for a capacitive pressures sensor is combined with the process flow for an inertial sensor. In this way, an inertial sensor is realized within the membrane layer of the pressure sensor. The device layer is simultaneously used as z-axis electrode for out-of-plane sensing in the inertial sensor, and/or as the wiring layer for the inertial sensor. The membrane layer (or cap layer) of the pressure sensor process flow is used to define the inertial sensor sensing structures. Insulating nitride plugs in the membrane layer are used to electrically decouple the various sensing structures for a multi-axis inertial sensor, allowing for fully differential sensing.
申请公布号 WO2015020881(A1) 申请公布日期 2015.02.12
申请号 WO2014US49210 申请日期 2014.07.31
申请人 ROBERT BOSCH GMBH;FEYH, ANDO;O'BRIEN, GARY 发明人 FEYH, ANDO;O'BRIEN, GARY
分类号 G01L9/12;B81B7/02 主分类号 G01L9/12
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