| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor exhibiting good characteristics in a high frequency in a transistor having a comb-like gate structure.SOLUTION: A semiconductor device comprises: a plurality fo gate fingers 111; a gate wiring part 112 connected to one ends of the gate fingers 111; a gate terminal part 113 which is connected to a center part of the gate wiring part 112 and to which a gate voltage is supplied; a plurality of source fingers 121; a source wiring part 122 connected to one ends of the source fingers 121; a plurality of drain fingers 131; and a drain wiring part 132 connected to one ends of the drain fingers 131. Each of the gate fingers 111 is formed between the source finger 121 and the drain finger 131. The gate wiring part 112 has a wiring width gradient region 112a in which a width near the gate terminal part 113 is widest and the width gradually decreases with distance from the gate terminal part 113. |
