INTEGRATED III-NITRIDE D-MODE HFET WITH CASCODED PAIR OF HALF BRIDGE

摘要

PROBLEM TO BE SOLVED: To suppress damage to a load and a circuit when depletion mode III-nitride field effect transistors (FETs) are used as high side and low side switches.SOLUTION: An integrated half bridge circuit includes: a die having first and second depletion mode III-nitride field effect transistors (FETs); and a group IV enhancement mode FET. The group IV enhancement mode FET has a normally off composite cascoded switch cascoded with the first depletion mode III-nitride FET as a high side switch and the second depletion mode III-nitride FET as a low side switch.