发明名称 ハイサイドスイッチ回路
摘要 <p>The high-side switch circuit includes a first output MOS transistor that is connected, at a first end thereof, to a power supply terminal. The high-side switch circuit includes a second output MOS transistor that is connected to a second end of the first output MOS transistor at a first end thereof and to a voltage output terminal at a second end thereof. The high-side switch circuit includes a current detecting circuit that detects a current flowing through the first output MOS transistor and outputs a detection signal. The high-side switch circuit includes a first gate driver that applies a first control voltage to a gate of the first output MOS transistor. The high-side switch circuit includes a second gate driver that applies a second control voltage to a gate of the second output MOS transistor.</p>
申请公布号 JP5667946(B2) 申请公布日期 2015.02.12
申请号 JP20110182974 申请日期 2011.08.24
申请人 发明人
分类号 H03K17/10;H03K17/687 主分类号 H03K17/10
代理机构 代理人
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