Compound Semiconductor Integrated Circuit and Method to Fabricate Same

摘要

A structure includes a substrate having a surface and a first transistor disposed in a first region supported by the surface of the substrate. The first transistor has a channel formed in a first compound (Group III-V) semiconductor having a first energy bandgap. The structure further includes a second transistor disposed in a second region supported by the substrate. The second transistor has a channel formed in a second compound (Group III-V) semiconductor having a second energy bandgap that is larger than the first energy bandgap. In one embodiment the first compound semiconductor is a layer that overlies a first portion of the surface of the substrate and the substrate is the second compound semiconductor. In another embodiment the second compound semiconductor is provided as a second layer that overlies a second portion of the surface of the substrate.

主权项

1. A structure, comprising:
a substrate having a surface; a first transistor disposed in a first region supported by the surface of the substrate, the first transistor having a channel formed in a first compound semiconductor material having a first energy bandgap; and a second transistor disposed in a second region supported by the substrate, the second transistor having a channel formed in a second compound semiconductor material having a second energy bandgap that is larger than the first energy bandgap.