PLASMA PROCESSING APPARATUS

摘要

A plasma processing apparatus includes a plasma forming part, a putting stage on which a wafer is put, a bias power supply which supplies high-frequency power to the putting stage and a detection part which detects amounts of positive and negative currents flowing between the bias power supply and the putting stage and a ratio of the positive and negative current amounts, and the plasma processing apparatus adjusts formation of the plasma or the plasma processing condition of the wafer in accordance with the ratio.

主权项

1. A plasma processing apparatus, comprising:
a processing container having a processing chamber disposed therein and from which processing gas is exhausted; a unit to supply an electric field in the processing chamber to form plasma using processing gas supplied in the processing chamber; a putting stage disposed in the processing chamber to put a wafer thereon; a bias power supply to supply high-frequency power to an electrode disposed in the putting stage; and a detection part to detect amounts of positive and negative currents flowing between the bias power supply and the putting stage and detect a ratio of a negative current amount (I−) and a positive current amount (I+) from which part caused by electrons in the plasma is removed, wherein formation of the plasma or processing condition using the plasma of a layer to be processed and disposed on the wafer is adjusted in accordance with the ratio.