| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can retain stored contents even when it is not supplied with power and has no limitations on the number of writes thereto, as well as heighten integration of the semiconductor device to increase its storage capacity per unit area.SOLUTION: The semiconductor device is fabricated by using an oxide semiconductor material which is a wide-gap semiconductor capable of sufficiently reducing the off-state current of a transistor, so that it is possible to retain information over a long period of time. Transistors 162 constituting memory cells of the semiconductor device and made from an oxide semiconductor are connected in series, and in adjacent memory cells, the source or the drain electrodes of the transistors are connected to each other, making it possible to reduce the occupied area of the memory cells. |
