METHOD OF MANUFACTURING AN INTEGRATED CIRCUIT

摘要

A method of forming an integrated circuit comprises forming a first doped region in a substrate using a first angle ion implantation performed on a first side of a gate structure. The gate structure has a length in a first direction and a width in a second direction. The method also comprises forming a second doped region in the substrate using a second angle ion implantation performed on a second side of the gate structure. The first angle ion implantation has a first implantation angle with respect to the second direction and the second angle ion implantation has a second implantation angle with respect to the second direction. Each of the first implantation angle and the second implantation angle is substantially larger than 0° and less than 90°.

主权项

1. A method of forming an integrated circuit, the method comprising:
forming a first doped region in a substrate using a first angle ion implantation performed on a first side of a gate structure, the gate structure having a length in a first direction and a width in a second direction; and forming a second doped region in the substrate using a second angle ion implantation performed on a second side of the gate structure, wherein the first angle ion implantation has a first implantation angle with respect to the second direction and the second angle ion implantation has a second implantation angle with respect to the second direction, and each of the first implantation angle and the second implantation angle is substantially larger than 0° and less than 90°.