发明名称 SUBSTRATE BACKSIDE TEXTURING
摘要 Embodiments described relate to a method and apparatus for reducing lithographic distortion. A backside of a semiconductor substrate may be texturized. Then a lithographic process may be performed on the semiconductor substrate having the texturized backside.
申请公布号 US2015044785(A1) 申请公布日期 2015.02.12
申请号 US201414453352 申请日期 2014.08.06
申请人 Tokyo Electron Limited 发明人 FONSECA Carlos A.;DEVILLIERS Anton;RATHSACK Benjamen M.;SMITH Jeffrey T.;HULI Lior
分类号 H01L21/66;H01L21/306 主分类号 H01L21/66
代理机构 代理人
主权项 1. A method for determining backside texturing of a semiconductor substrate that is processed on a photolithography tool, comprising: determining one or more contact areas on the photolithography tool for the semiconductor substrate; determining a backside surface texturing for the semiconductor substrate that is based, at least in part, on: a frequency of backside features of the semiconductor substrate at one or more portions of the semiconductor substrate,an amplitude of the backside features at the one or more portions of the semiconductor substrate, ora size of the one or more contact areas; and processing the semiconductor substrate to obtain a target backside surface texturing that reduces the coefficient of friction between the substrate and the one or more contact areas.
地址 Tokyo JP