| 摘要 |
PROBLEM TO BE SOLVED: To provide a sputtering device capable of making a metal sulfide, metal selenide or metal telluride thin film on a substrate or a base material with a large area at room temperature.SOLUTION: The sputtering device 10 includes a substrate 20, at least one cathode 40, and at least one target 50 arranged near the cathode inside a chamber, and has a separation plate 60 for partitioning a space partially surrounded by the substrate and the target and the other space inside the chamber, and a heating means 70 for heating the separation plate. Components in a thin film deposited on the substrate are prevented from evaporating again and spreading inside the chamber by the separation plate, the vapor of the components which have evaporated again is prevented from adhering to the separation plate by heating the separation plate by the heating means further, and a vapor pressure is maintained in a high state. |
