| 摘要 |
<p>A silicon carbide substrate (SB) has a substrate surface (12B). A gate insulating film (15) is provided to cover a part of the substrate surface (12B). A gate electrode (17) covers a part of the gate insulating film (15). A contact electrode (16) is provided on the substrate surface (12B), adjacent to and in contact with the gate insulating film (15), and it contains an alloy having Al atoms. Al atoms do not diffuse from the contact electrode (16) into a portion of the gate insulating film (15) lying between the substrate surface (12B) and the gate electrode (17). Thus, in a case where a contact electrode having Al atoms is employed, reliability of the gate insulating film (15) of a semiconductor device can be improved</p> |
