| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME |
| 摘要 |
Provided is a method of fabricating a semiconductor device. The method of fabricating a semiconductor device includes preparing a substrate in which a scribe lane region and a chip region are defined, forming a trench in the scribe lane region of the substrate, forming a stopper layer in a part in the trench, and forming an alignment mark material on the stopper layer. |
| 申请公布号 |
US2015044854(A1) |
申请公布日期 |
2015.02.12 |
| 申请号 |
US201414454432 |
申请日期 |
2014.08.07 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
LEE Jeong-Kil;PARK Chan-Ho;CHO Nam-Ki;CHOI Won-Sang |
| 分类号 |
H01L23/544;H01L21/283;H01L21/762 |
主分类号 |
H01L23/544 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a semiconductor device, the method comprising:
preparing a substrate to include both a scribe lane region and a chip region; creating a trench in the scribe lane region of the substrate; forming a stopper layer in a portion in the trench; and forming an alignment mark material on the stopper layer in the trench. |
| 地址 |
Suwon-si KR |
