METHOD OF INTRODUCING LOCAL STRESS IN A SEMICONDUCTOR LAYER

摘要

The disclosure concerns a method of stressing a semiconductor layer comprising: forming, over a silicon on insulator structure having a semiconductor layer in contact with an insulating layer, one or more stressor blocks aligned with first regions of said semiconductor layer in which transistor channels are to be formed, wherein said stressor blocks are stressed such that they locally stress said semiconductor layer; and deforming second regions of said insulating layer adjacent to said first regions by temporally decreasing, by annealing, the viscosity of said insulator layer.

主权项

1. A method, comprising:
forming stressor blocks over a silicon on insulator (SOI) structure, the SOI structure having a semiconductor layer in contact with an insulating layer, said stressor blocks being aligned with first regions of said semiconductor layer in which transistor channels are to be formed, wherein said stressor blocks locally stress said semiconductor layer; and in an annealing step, deforming second regions of said insulating layer adjacent to said first regions by temporarily decreasing a viscosity of said insulator layer.