| 发明名称 |
METHOD OF GROWING INGOT AND INGOT |
| 摘要 |
Provided is a method of growing an ingot. The method of growing the ingot includes melting a silicon to prepare a silicon melt solution, preparing a seed crystal having a crystal orientation [110], growing a neck part from the seed crystal, and growing an ingot having the crystal orientation [110] from the neck part. The neck part has a diameter of about 4 mm to about 8 mm. |
| 申请公布号 |
US2015044467(A1) |
申请公布日期 |
2015.02.12 |
| 申请号 |
US201113821005 |
申请日期 |
2011.11.30 |
| 申请人 |
Jo Hwajin;Kim Sanghee;Jung Youngho;Kim Namseok |
发明人 |
Jo Hwajin;Kim Sanghee;Jung Youngho;Kim Namseok |
| 分类号 |
C30B15/36;C30B15/04;C30B29/06;C30B15/14 |
主分类号 |
C30B15/36 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of growing an ingot, the method comprising:
melting a silicon to prepare a silicon melt solution; preparing a seed crystal having a crystal orientation [110]; growing a neck part from the seed crystal; and growing an ingot having the crystal orientation [110] from the neck part, wherein the neck part has a diameter of about 4 mm to about 8 mm. |
| 地址 |
Gyeongsangbuk-do KR |
