PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD

摘要

A plasma processing device comprises: a dielectric whereupon connection pores are formed which connect an internal space with a processing space; first and second electrodes which sandwich the internal space; a first gas supply mechanism which supplies a first processing gas to the internal space; a first RF power source which supplies a first RF power to the first electrode and/or the second electrode and generates a first plasma of the first processing gas; a decompression mechanism which introduces radicals in the first plasma together with the first processing gas into the processing space; a second RF power source which supplies a second RF power, generates a second plasma of the first processing gas, and draws ions into a subject for processing; and a control unit which adjusts the amount of radicals in the second plasma by controlling the magnitude of the overall power of the first RF power, and adjusts the amount of ions in the second plasma by controlling the ratio of the first RF power.